MBR10H150CT Taiwan Semiconductor
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 50+ | 1.83 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.70 EUR |
| 5000+ | 0.69 EUR |
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Technische Details MBR10H150CT Taiwan Semiconductor
Description: DIODE ARR SCHOT 150V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.
Weitere Produktangebote MBR10H150CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR10H150CT | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE ARR SCHOT 150V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |