MBR12080CTR GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
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Technische Details MBR12080CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 120A (DC), Supplier Device Package: Twin Tower, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A, Current - Reverse Leakage @ Vr: 3 mA @ 20 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60, Voltage Coupled to Current - Reverse Leakage @ Vr: 20.
Weitere Produktangebote MBR12080CTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR12080CTR | Hersteller : GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 120A 80P56R |
Produkt ist nicht verfügbar |