MBR20060CT GeneSiC Semiconductor
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 143.19 EUR |
| 10+ | 125.05 EUR |
| 25+ | 118.24 EUR |
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Technische Details MBR20060CT GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 200A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Twin Tower, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A, Current - Reverse Leakage @ Vr: 5 mA @ 20 V.
Weitere Produktangebote MBR20060CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| MBR20060CT | Hersteller : MOTOROLA |
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auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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MBR20060CT | Hersteller : GeneSiC Semiconductor |
Rectifier Diode Schottky 60V 200A 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
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| MBR20060CT | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |