MBR2X120A080 GeneSiC Semiconductor

Description: DIODE SCHOTTKY 80V 120A SOT227, Current - Reverse Leakage @ Vr: 1 mA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 120A, Diode Configuration: 2 Independent, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.