MBR30170MFST3G ON Semiconductor
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Technische Details MBR30170MFST3G ON Semiconductor
Description: DIODE SCHOTTKY 170V 30A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 821pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 170 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 170 V.
Weitere Produktangebote MBR30170MFST3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR30170MFST3G | Hersteller : onsemi |
Description: DIODE SCHOTTKY 170V 30A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 821pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V |
Produkt ist nicht verfügbar |
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MBR30170MFST3G | Hersteller : onsemi |
Description: DIODE SCHOTTKY 170V 30A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 821pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V |
Produkt ist nicht verfügbar |
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MBR30170MFST3G | Hersteller : onsemi | Schottky Diodes & Rectifiers 170V, 30A, SCHOTTKY |
Produkt ist nicht verfügbar |