
MBR30170MFST3G onsemi

Description: DIODE SCHOTTKY 170V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 821pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 4.68 EUR |
10+ | 3.03 EUR |
100+ | 2.08 EUR |
500+ | 1.68 EUR |
1000+ | 1.55 EUR |
2000+ | 1.44 EUR |
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Technische Details MBR30170MFST3G onsemi
Description: DIODE SCHOTTKY 170V 30A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 821pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 170 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 170 V.
Weitere Produktangebote MBR30170MFST3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MBR30170MFST3G | Hersteller : ON Semiconductor |
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MBR30170MFST3G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 821pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V |
Produkt ist nicht verfügbar |
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![]() |
MBR30170MFST3G | Hersteller : onsemi |
![]() |
Produkt ist nicht verfügbar |