Technische Details MBR3035CT EIC Semiconductor
Description: DIODE ARR SCHOTT 35V 30A TO220AB, Current - Reverse Leakage @ Vr: 200 µA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A, Voltage - DC Reverse (Vr) (Max): 35 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io) (per Diode): 30A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote MBR3035CT
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MBR3035CT | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 30A TO220ABCurrent - Reverse Leakage @ Vr: 200 µA @ 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 30A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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MBR3035CT | Hersteller : Taiwan Semiconductor |
Schottky Diodes & Rectifiers 30A, 35V, Schottky Rectifier |
Produkt ist nicht verfügbar |


