MBR3530 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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Technische Details MBR3530 GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 35A DO4, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 35A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.
Weitere Produktangebote MBR3530
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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MBR3530 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 30V - 35A Schottky Rectifier |
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