MBR3560R GeneSiC Semiconductor
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.05 EUR |
| 10+ | 26.45 EUR |
| 25+ | 24.83 EUR |
| 100+ | 22.56 EUR |
| 250+ | 21.98 EUR |
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Technische Details MBR3560R GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 35A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-4, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V.
Weitere Produktangebote MBR3560R nach Preis ab 25.02 EUR bis 31.29 EUR
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MBR3560R | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY REV 60V 35A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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