MBR3560R GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 28.11 EUR |
| 10+ | 23.95 EUR |
| 25+ | 22.48 EUR |
| 100+ | 20.42 EUR |
| 250+ | 19.91 EUR |
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Technische Details MBR3560R GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 35A DO4, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A, Voltage - DC Reverse (Vr) (Max): 60 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 35A, Technology: Schottky, Reverse Polarity, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.
Weitere Produktangebote MBR3560R nach Preis ab 25.02 EUR bis 31.29 EUR
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MBR3560R | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY REV 60V 35A DO4Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 35A Technology: Schottky, Reverse Polarity Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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