Technische Details MBR8H100MFST3G ON Semiconductor
Description: DIODE SCHOTTKY 100V 8A 5DFN, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Current - Average Rectified (Io): 8A, Technology: Schottky.
Weitere Produktangebote MBR8H100MFST3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MBR8H100MFST3G | onsemi |
 Description: DIODE SCHOTTKY 100V 8A 5DFNSpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 8A Technology: Schottky |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
MBR8H100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFN Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MBR8H100MFST3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Description: DIODE SCHOTTKY 100V 8A 5DFN
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR8H100MFST3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 8A 5DFN
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH