MBRAD10200DH Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.3 EUR |
| 10+ | 1.1 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.51 EUR |
| 2500+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MBRAD10200DH Taiwan Semiconductor
Description: DIODE ARR SCHOTTKY 200V THINDPAK, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ThinDPAK, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote MBRAD10200DH nach Preis ab 0.51 EUR bis 1.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MBRAD10200DH | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE ARR SCHOTTKY 200V THINDPAKQualification: AEC-Q101 Grade: Automotive Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ThinDPAK Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 4408 Stücke: Lieferzeit 10-14 Tag (e) |
|