
MBRAD10200DH Taiwan Semiconductor Corporation

Description: DIODE ARR SCHOTT 200V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
14+ | 1.32 EUR |
16+ | 1.15 EUR |
100+ | 0.79 EUR |
500+ | 0.66 EUR |
1000+ | 0.56 EUR |
2000+ | 0.50 EUR |
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Technische Details MBRAD10200DH Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 200V THINDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: ThinDPAK, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MBRAD10200DH nach Preis ab 0.47 EUR bis 1.37 EUR
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MBRAD10200DH | Hersteller : Taiwan Semiconductor |
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auf Bestellung 4480 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRAD10200DH | Hersteller : Taiwan Semiconductor |
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MBRAD10200DH | Hersteller : TAIWAN SEMICONDUCTOR |
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MBRAD10200DH | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ThinDPAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |