MBRB10100CT-E3/4W Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details MBRB10100CT-E3/4W Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io) (per Diode): 5A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
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