| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.3 EUR |
| 2500+ | 0.29 EUR |
| 5000+ | 0.27 EUR |
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Produktbewertung abgeben
Technische Details MBRM110ET3G onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE, Current - Reverse Leakage @ Vr: 1 µA @ 10 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 10 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Powermite, Current - Average Rectified (Io): 1A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-216AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote MBRM110ET3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MBRM110ET3G | onsemi |
 Description: DIODE SCHOTTKY 10V 1A POWERMITECurrent - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Powermite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
MBRM110ET3G | onsemi |
Description: DIODE SCHOTTKY 10V 1A POWERMITE Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MBRM110ET3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRM110ET3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH