MBRT20060R GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 168.43 EUR |
| 10+ | 147.73 EUR |
| 25+ | 140.22 EUR |
| 50+ | 134.80 EUR |
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Technische Details MBRT20060R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
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