MBRT20060R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
| Anzahl | Preis |
|---|---|
| 1+ | 168.43 EUR |
| 10+ | 147.73 EUR |
| 25+ | 140.22 EUR |
| 50+ | 134.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MBRT20060R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Anode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk, Current - Reverse Leakage @ Vr: 1 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A, Voltage - DC Reverse (Vr) (Max): 60 V, Part Status: Active.
Weitere Produktangebote MBRT20060R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MBRT20060R | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 60V 200A Schottky Recovery |
Produkt ist nicht verfügbar |