MBRT30035

MBRT30035 GeneSiC Semiconductor


mbrt30020.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
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Technische Details MBRT30035 GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 35V 150A 3TOWER, Current - Reverse Leakage @ Vr: 1 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A, Voltage - DC Reverse (Vr) (Max): 35 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 150A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.

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MBRT30035 MBRT30035 Hersteller : GeneSiC Semiconductor mbrt30035.pdf Diode Modules 35V 300A Schottky Recovery
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