MBRT40045DL GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
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Technische Details MBRT40045DL GeneSiC Semiconductor
Description: DIODE SCHOTT 45V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Three Tower, Operating Temperature - Junction: -40°C ~ 100°C, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A, Current - Reverse Leakage @ Vr: 5 mA @ 45 V.