Technische Details MC33GD3100B3EKR2 NXP Semiconductors
Description: GATE DRIVERS HV ISOLATED GATE DR, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 3.3V, Supplier Device Package: 32-SOIC, Channel Type: Single, Driven Configuration: Half-Bridge, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Current - Peak Output (Source, Sink): 15A, 15A, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote MC33GD3100B3EKR2
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| MC33GD3100B3EKR2 | Hersteller : NXP USA Inc. |
 Description: GATE DRIVERS HV ISOLATED GATE DRPackaging: Tape & Reel (TR) Package / Case: 32-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3.3V Supplier Device Package: 32-SOIC Channel Type: Single Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 15A, 15A Grade: Automotive Qualification: AEC-Q100 |
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MC33GD3100B3EKR2 | Hersteller : NXP Semiconductors |
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters |
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