MCAC120N04YHE3-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: MOSFET N-CH 40 120A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.4 EUR |
| 10+ | 2.86 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.63 EUR |
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Technische Details MCAC120N04YHE3-TP MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 120A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V, Power Dissipation (Max): 83W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN5060, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote MCAC120N04YHE3-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MCAC120N04YHE3-TP | Hersteller : Micro Commercial Components |
Power MOSFETS |
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MCAC120N04YHE3-TP | Hersteller : MCC (Micro Commercial Components) |
Description: MOSFET N-CH 40 120A DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Power Dissipation (Max): 83W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |