MCAC25P10YHE3-TP Micro Commercial Components (MCC)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.3 EUR |
| 2500+ | 1.26 EUR |
| 5000+ | 1.13 EUR |
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10-14 Tag (e)
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Technische Details MCAC25P10YHE3-TP Micro Commercial Components (MCC)
Description: MOSFET P-CH 100 25A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A, Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V, Power Dissipation (Max): 70W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote MCAC25P10YHE3-TP nach Preis ab 1.21 EUR bis 3.72 EUR
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MCAC25P10YHE3-TP | MCC (Micro Commercial Components) |
 Description: MOSFET P-CH 100 25A DFN5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Power Dissipation (Max): 70W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3712 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCAC25P10YHE3-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 100 25A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET P-CH 100 25A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.21 EUR |