MCAC25P10YHE3-TP Micro Commercial Components (MCC)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |
| 2500+ | 1.06 EUR |
| 5000+ | 0.95 EUR |
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Technische Details MCAC25P10YHE3-TP Micro Commercial Components (MCC)
Description: MOSFET P-CH 100 25A DFN5060, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 70W (Tj), Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Weitere Produktangebote MCAC25P10YHE3-TP nach Preis ab 1.02 EUR bis 3.13 EUR
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MCAC25P10YHE3-TP | MCC (Micro Commercial Components) |
 Description: MOSFET P-CH 100 25A DFN5060Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tj) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
auf Bestellung 3712 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCAC25P10YHE3-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 100 25A DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET P-CH 100 25A DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 3712 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 2 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.02 EUR |