MCAC80P06YHE3-TP Micro Commercial Components (MCC)
auf Bestellung 3603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.17 EUR |
10+ | 2.64 EUR |
100+ | 2.11 EUR |
250+ | 1.95 EUR |
500+ | 1.76 EUR |
1000+ | 1.57 EUR |
5000+ | 1.39 EUR |
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Technische Details MCAC80P06YHE3-TP Micro Commercial Components (MCC)
Description: MOSFET P-CH 60 80A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 120W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN5060, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote MCAC80P06YHE3-TP nach Preis ab 1.42 EUR bis 3.94 EUR
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MCAC80P06YHE3-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 2362 Stücke: Lieferzeit 10-14 Tag (e) |
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MCAC80P06YHE3-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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MCAC80P06YHE3-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |