MCACD033N10YLHE3-TP Micro Commercial Components (MCC)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.74 EUR |
| 5000+ | 0.69 EUR |
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Technische Details MCACD033N10YLHE3-TP Micro Commercial Components (MCC)
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W (Tj), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PDFN5060-8D, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MCACD033N10YLHE3-TP nach Preis ab 0.76 EUR bis 2.76 EUR
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MCACD033N10YLHE3-TP | MCC (Micro Commercial Components) |
 Description: DUAL N-CHANNEL MOSFET,PDFN5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tj) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PDFN5060-8D Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4908 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCACD033N10YLHE3-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 12+ | 1.75 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.83 EUR |
| 2000+ | 0.76 EUR |