MCACL1D7N04YHHE3-TP Micro Commercial Co

Description: N-CHANNEL MOSFET,DFN5060, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4317 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tj), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).