MCACLD85N04YL-TP Micro Commercial Components (MCC)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.83 EUR |
| 5000+ | 1.62 EUR |
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Technische Details MCACLD85N04YL-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET,DFN5060, Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 136W (Tj), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote MCACLD85N04YL-TP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MCACLD85N04YL-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN5060 Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN5060 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tj) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCACLD85N04YL-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN5060 Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN5060 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tj) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCACLD85N04YL-TP |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tj)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tj)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCACLD85N04YL-TP |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tj)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET,DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 6125 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tj)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH