MCB180N10Y-TP Micro Commercial Co

Description: MOSFET N-CH D2-PAK, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 357W (Tj), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.