MCB220N15Y-TP Micro Commercial Components (MCC)
| Anzahl | Preis |
|---|---|
| 1+ | 8.66 EUR |
| 10+ | 6.39 EUR |
| 100+ | 4.61 EUR |
| 1000+ | 4.38 EUR |
| 5000+ | 4.31 EUR |
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Technische Details MCB220N15Y-TP Micro Commercial Components (MCC)
Description: MOSFET, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9177 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 312.5W (Tj), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote MCB220N15Y-TP nach Preis ab 4.63 EUR bis 9.56 EUR
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MCB220N15Y-TP | MCC (Micro Commercial Components) |
 Description: MOSFETPackaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9177 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 312.5W (Tj) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
auf Bestellung 7715 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCB220N15Y-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9177 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 312.5W (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: MOSFET
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9177 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 312.5W (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 7715 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.56 EUR |
| 10+ | 6.42 EUR |
| 100+ | 4.64 EUR |
| 500+ | 4.63 EUR |