MCBS260N10YHE3-TP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10589 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
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Technische Details MCBS260N10YHE3-TP Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-263-7, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 10589 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tj), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tape & Reel (TR).
Weitere Produktangebote MCBS260N10YHE3-TP nach Preis ab 7.24 EUR bis 14.66 EUR
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MCBS260N10YHE3-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,TO-263-7 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 10589 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Cut Tape (CT) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MCBS260N10YHE3-TP |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10589 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET,TO-263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10589 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.66 EUR |
| 10+ | 9.91 EUR |
| 100+ | 7.24 EUR |