MCG08P06HE3-TP Micro Commercial Components


MCG08P06HE3(DFN3333-8).pdf Hersteller: Micro Commercial Components
P-CHANNEL MOSFET
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Technische Details MCG08P06HE3-TP Micro Commercial Components

Description: Interface, Packaging: Bulk, Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 28.4mOhm @ 6A, 10V, Power Dissipation (Max): 20.8W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DFN3333, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4304 pF @ 30 V, Qualification: AEC-Q101.

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MCG08P06HE3-TP MCG08P06HE3-TP Hersteller : Micro Commercial Co MCG08P06HE3(DFN3333-8).pdf Description: Interface
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 28.4mOhm @ 6A, 10V
Power Dissipation (Max): 20.8W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4304 pF @ 30 V
Qualification: AEC-Q101
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MCG08P06HE3-TP MCG08P06HE3-TP Hersteller : Micro Commercial Components (MCC) MCG08P06HE3_DFN3333_8_-3199148.pdf MOSFET P-CHANNEL MOSFET
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