MCG15P10YHE3-TP Micro Commercial Components (MCC)
| Anzahl | Preis |
|---|---|
| 2+ | 1.47 EUR |
| 10+ | 1.3 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.6 EUR |
| 5000+ | 0.51 EUR |
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Technische Details MCG15P10YHE3-TP Micro Commercial Components (MCC)
Description: P-CHANNEL MOSFET, DFN3333, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DFN3333, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 50W (Tj), Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.
Weitere Produktangebote MCG15P10YHE3-TP nach Preis ab 0.55 EUR bis 2.01 EUR
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MCG15P10YHE3-TP | MCC (Micro Commercial Components) |
 Description: P-CHANNEL MOSFET, DFN3333Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: DFN3333 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 50W (Tj) Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 4783 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCG15P10YHE3-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: DFN3333
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tj)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: P-CHANNEL MOSFET, DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: DFN3333
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tj)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 14+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.58 EUR |
| 2000+ | 0.55 EUR |