MCG15P10YHE3-TP Micro Commercial Components (MCC)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.75 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.71 EUR |
| 5000+ | 0.61 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details MCG15P10YHE3-TP Micro Commercial Components (MCC)
Description: P-CHANNEL MOSFET, DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V, Power Dissipation (Max): 50W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote MCG15P10YHE3-TP nach Preis ab 0.65 EUR bis 2.39 EUR
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MCG15P10YHE3-TP | MCC (Micro Commercial Components) |
 Description: P-CHANNEL MOSFET, DFN3333Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4783 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCG15P10YHE3-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
Description: P-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.39 EUR |
| 14+ | 1.5 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.65 EUR |