MCG25P06Y-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: P-CHANNEL MOSFET,DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN3333
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.9 EUR |
| 11+ | 1.69 EUR |
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Technische Details MCG25P06Y-TP Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A, Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V, Power Dissipation (Max): 60W (Tj), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN3333, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
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MCG25P06Y-TP | Hersteller : Micro Commercial Co |
Description: P-CHANNEL MOSFET,DFN3333 Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V Power Dissipation (Max): 60W (Tj) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN3333 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
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