MCG40N10YHE3-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: N-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.48 EUR |
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Technische Details MCG40N10YHE3-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V, Power Dissipation (Max): 43W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MCG40N10YHE3-TP nach Preis ab 0.51 EUR bis 1.60 EUR
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MCG40N10YHE3-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFETs |
auf Bestellung 4842 Stücke: Lieferzeit 10-14 Tag (e) |
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MCG40N10YHE3-TP | Hersteller : MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET, DFN3333 Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9862 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCG40N10YHE3-TP | Hersteller : Micro Commercial Components |
MCG40N10YHE3-TP |
Produkt ist nicht verfügbar |