MCG53N06AHE3-TP Micro Commercial Components
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Technische Details MCG53N06AHE3-TP Micro Commercial Components
Description: Interface, Packaging: Bulk, Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A, Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V, Power Dissipation (Max): 45W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote MCG53N06AHE3-TP
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MCG53N06AHE3-TP | Hersteller : Micro Commercial Components |
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MCG53N06AHE3-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 45W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MCG53N06AHE3-TP | Hersteller : Micro Commercial Components (MCC) |
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Produkt ist nicht verfügbar |