
MCGWF60N04YHE3-TP Micro Commercial Components (MCC)
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.59 EUR |
10+ | 2.96 EUR |
100+ | 2.38 EUR |
250+ | 2.09 EUR |
500+ | 1.90 EUR |
1000+ | 1.76 EUR |
2500+ | 1.70 EUR |
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Technische Details MCGWF60N04YHE3-TP Micro Commercial Components (MCC)
Description: POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V, Power Dissipation (Max): 93W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote MCGWF60N04YHE3-TP nach Preis ab 1.64 EUR bis 5.46 EUR
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MCGWF60N04YHE3-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V Power Dissipation (Max): 93W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4940 Stücke: Lieferzeit 10-14 Tag (e) |
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MCGWF60N04YHE3-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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MCGWF60N04YHE3-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V Power Dissipation (Max): 93W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |