MCGWF60N06YHE3-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.60 EUR |
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Technische Details MCGWF60N06YHE3-TP MCC (Micro Commercial Components)
Description: POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 60W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote MCGWF60N06YHE3-TP nach Preis ab 1.62 EUR bis 4.86 EUR
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MCGWF60N06YHE3-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFETs N-CHANNEL MOSFET,DFN3333-8(SWF) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MCGWF60N06YHE3-TP | Hersteller : MCC (Micro Commercial Components) |
Description: POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 60W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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