Technische Details MCH3383-TL-W ON Semiconductor
Description: MOSFET P-CH 12V 3.5A SC70, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: SC-70FL/MCPH3, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V.
Weitere Produktangebote MCH3383-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MCH3383-TL-W | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH Si 12V 3.5A 3-Pin MCPH T/R |
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MCH3383-TL-W | Hersteller : onsemi |
Description: MOSFET P-CH 12V 3.5A SC70 Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V |
Produkt ist nicht verfügbar |
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MCH3383-TL-W | Hersteller : onsemi |
Description: MOSFET P-CH 12V 3.5A SC70 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V |
Produkt ist nicht verfügbar |