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Technische Details MCH3420-TL-E ON Semiconductor
Description: MCH3420 - N-CHANNEL SILICON MOSF, Packaging: Bulk, Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.85mOhm @ 250mA, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: 3-MCPH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 20 V.
Weitere Produktangebote MCH3420-TL-E nach Preis ab 0.48 EUR bis 0.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| MCH3420-TL-E | ONSEMI |
 Description: ONSEMI - MCH3420-TL-E - MCH3420 - N-CHANNEL SILICON MOSFETtariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7477 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCH3420-TL-E | onsemi |
Description: MCH3420 - N-CHANNEL SILICON MOSF Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 250mA, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: 3-MCPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 20 V |
auf Bestellung 7477 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MCH3420-TL-E |
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Hersteller: ONSEMI
Description: ONSEMI - MCH3420-TL-E - MCH3420 - N-CHANNEL SILICON MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MCH3420-TL-E - MCH3420 - N-CHANNEL SILICON MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7477 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1886+ | 0.48 EUR |
| MCH3420-TL-E |
|
Hersteller: onsemi
Description: MCH3420 - N-CHANNEL SILICON MOSF
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 250mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 3-MCPH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 20 V
Description: MCH3420 - N-CHANNEL SILICON MOSF
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 250mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 3-MCPH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 20 V
auf Bestellung 7477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1069+ | 0.5 EUR |