MCH6421-TL-W onsemi
Hersteller: onsemiDescription: MOSFET N-CH 20V 5.5A MCPH6
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SC-88FL/MCPH6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 294814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1560+ | 0.31 EUR |
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Technische Details MCH6421-TL-W onsemi
Description: MOSFET N-CH 20V 5.5A MCPH6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: SC-88FL/MCPH6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V.
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MCH6421-TL-W | Hersteller : ON Semiconductor |
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| MCH6421-TL-W | Hersteller : ONSEMI |
Description: ONSEMI - MCH6421-TL-W - MOSFET, N-CH, 20V, 5.5A, SC-88-6 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 294814 Stücke: Lieferzeit 14-21 Tag (e) |
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MCH6421-TL-W | Hersteller : onsemi |
Description: MOSFET N-CH 20V 5.5A MCPH6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SC-88FL/MCPH6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
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