MCH6660-TL-H (Transistor)

Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2A/1.5A 6MCPH
Supplier Device Package: 6-MCPH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 136mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk

Hersteller: Aptina Imaging
Trans MOSFET N/P-CH 20V 2A/1.5A 6-Pin MCPH T/R

Hersteller: ONSEMI
Description: ONSEMI - MCH6660-TL-H - Dual-MOSFET, Komplementär zweifach n-Kanal und zweifach p-Kanal, 20 V, -20 V, 2 A, -1.5 A
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -1.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 2A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.205ohm
Verlustleistung, p-Kanal: 800mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: MCPH
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.105ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementär zweifach n-Kanal und zweifach p-Kanal
Verlustleistung, n-Kanal: 800mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)