MCMN2012A-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6JA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
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Technische Details MCMN2012A-TP Micro Commercial Co
Description: N-CHANNEL MOSFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A, Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2020-6JA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V.
Weitere Produktangebote MCMN2012A-TP nach Preis ab 0.27 EUR bis 0.7 EUR
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MCMN2012A-TP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020-6JA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V |
auf Bestellung 17577 Stücke: Lieferzeit 10-14 Tag (e) |
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