MCMN2014HE3-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: N-CHANNEL MOSFET, DFN2020-6LE
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6LE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 0.84 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
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Technische Details MCMN2014HE3-TP Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN2020-6LE, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A, Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: DFN2020-6LE, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V.
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MCMN2014HE3-TP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN2020-6LE Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN2020-6LE Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V |
Produkt ist nicht verfügbar |