auf Bestellung 199 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.49 EUR |
| 25+ | 4.58 EUR |
| 100+ | 4.11 EUR |
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Technische Details MCP14E9-E/SN Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 4.5V ~ 18V, Input Type: Inverting, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 14ns, 17ns, Channel Type: Independent, Driven Configuration: Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Current - Peak Output (Source, Sink): 3A, 3A, Part Status: Active, DigiKey Programmable: Not Verified.
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MCP14E9-E/SN | Hersteller : Microchip Technology |
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MCP14E9-E/SN | Hersteller : Microchip Technology |
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MCP14E9-E/SN | Hersteller : MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Case: SO8 Output current: 3A Number of channels: 2 Supply voltage: 4.5...18V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 25ns Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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MCP14E9-E/SN | Hersteller : Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 14ns, 17ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3A, 3A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MCP14E9-E/SN | Hersteller : MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Case: SO8 Output current: 3A Number of channels: 2 Supply voltage: 4.5...18V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 25ns |
Produkt ist nicht verfügbar |