MCQ12N06-TP Micro Commercial Components (MCC)
auf Bestellung 26843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.39 EUR |
10+ | 1.22 EUR |
100+ | 0.85 EUR |
500+ | 0.71 EUR |
1000+ | 0.61 EUR |
2000+ | 0.54 EUR |
4000+ | 0.50 EUR |
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Technische Details MCQ12N06-TP Micro Commercial Components (MCC)
Description: MOSFET N-CH 60V 12A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tj), Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V, Power Dissipation (Max): 3.1W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V.
Weitere Produktangebote MCQ12N06-TP
Foto | Bezeichnung | Hersteller | Beschreibung |
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MCQ12N06-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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MCQ12N06-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Power Dissipation (Max): 3.1W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V |
Produkt ist nicht verfügbar |
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MCQ12N06-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Power Dissipation (Max): 3.1W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V |
Produkt ist nicht verfügbar |