MCT06P10-TP
Produktcode: 195728
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Weitere Produktangebote MCT06P10-TP nach Preis ab 0.38 EUR bis 1.76 EUR
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MCT06P10-TP | MCC (Micro Commercial Components) |
Description: MOSFET P-CH 100V 6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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MCT06P10-TP | MCC (Micro Commercial Components) |
Description: MOSFET P-CH 100V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
auf Bestellung 12583 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCT06P10-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 100V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.45 EUR |
| 5000+ | 0.42 EUR |
| 7500+ | 0.4 EUR |
| 12500+ | 0.38 EUR |
| MCT06P10-TP |
![]() |
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 100V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 12583 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 16+ | 1.1 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |

