MCT08P10Y-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 5+ | 4.08 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.79 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.32 EUR |
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Technische Details MCT08P10Y-TP MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-223, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.2W, Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote MCT08P10Y-TP
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MCT08P10Y-TP | MCC (Micro Commercial Components) |
Description: P-CHANNEL MOSFET,SOT-223 Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.2W Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MCT08P10Y-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: P-CHANNEL MOSFET,SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W
Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH