MCTLD58N04Y-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 639A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 50A, 10V
Power Dissipation (Max): 429W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19547 pF @ 20 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 4.22 EUR |
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Technische Details MCTLD58N04Y-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L, Packaging: Cut Tape (CT), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 639A (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 50A, 10V, Power Dissipation (Max): 429W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 255.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19547 pF @ 20 V.
Weitere Produktangebote MCTLD58N04Y-TP nach Preis ab 5.17 EUR bis 10.38 EUR
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MCTLD58N04Y-TP | Hersteller : MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,TOLL-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 639A (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 50A, 10V Power Dissipation (Max): 429W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 255.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19547 pF @ 20 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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