MCU18N20-TP Micro Commercial Co

Description: MOSFET N-CH ENH FET 200VDS 30VGS, Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 65.8W, Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.