MCU40N10AHE3-TP Micro Commercial Co

Description: MOSFET N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.