MCU60N02-TP Micro Commercial Components (MCC)
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| 2500+ | 0.34 EUR |
| 5000+ | 0.3 EUR |
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Technische Details MCU60N02-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET, DPAK, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V.
Weitere Produktangebote MCU60N02-TP nach Preis ab 0.39 EUR bis 1.39 EUR
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MCU60N02-TP | MCC (Micro Commercial Components) |
 Description: N-CHANNEL MOSFET, DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V |
auf Bestellung 1473 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCU60N02-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V
Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V
auf Bestellung 1473 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |