MCU75N06YHE3-TP Micro Commercial Components (MCC)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.05 EUR |
| 2500+ | 0.99 EUR |
| 5000+ | 0.95 EUR |
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Technische Details MCU75N06YHE3-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET,DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 100W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1698 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote MCU75N06YHE3-TP
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MCU75N06YHE3-TP | Hersteller : Micro Commercial Co |
 Description: N-CHANNEL MOSFET,DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1698 pF @ 30 V Qualification: AEC-Q101 |
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MCU75N06YHE3-TP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET,DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1698 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |