MD06P115 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; Idm: -20A; 1.5W; SOT26
Case: SOT26
Mounting: SMD
On-state resistance: 85mΩ
Kind of package: reel; tape
Power dissipation: 1.5W
Pulsed drain current: -20A
Gate charge: 16nC
Polarisation: unipolar
Drain current: -3.1A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; Idm: -20A; 1.5W; SOT26
Case: SOT26
Mounting: SMD
On-state resistance: 85mΩ
Kind of package: reel; tape
Power dissipation: 1.5W
Pulsed drain current: -20A
Gate charge: 16nC
Polarisation: unipolar
Drain current: -3.1A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
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Technische Details MD06P115 DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; Idm: -20A; 1.5W; SOT26, Case: SOT26, Mounting: SMD, On-state resistance: 85mΩ, Kind of package: reel; tape, Power dissipation: 1.5W, Pulsed drain current: -20A, Gate charge: 16nC, Polarisation: unipolar, Drain current: -3.1A, Kind of channel: enhanced, Drain-source voltage: -60V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote MD06P115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MD06P115 | Hersteller : Diotec Semiconductor | MOSFET MOSFET, SOT-26, -60V, -3.1A, P, 1.5W |
Produkt ist nicht verfügbar |
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MD06P115 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; Idm: -20A; 1.5W; SOT26 Case: SOT26 Mounting: SMD On-state resistance: 85mΩ Kind of package: reel; tape Power dissipation: 1.5W Pulsed drain current: -20A Gate charge: 16nC Polarisation: unipolar Drain current: -3.1A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |