MD2009DFX
Hersteller:
auf Bestellung 1110 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MD2009DFX
Description: TRANS NPN 700V 10A TO-3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A, Current - Collector Cutoff (Max): 200µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V, Supplier Device Package: TO-3PF, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 700 V, Power - Max: 58 W.
Weitere Produktangebote MD2009DFX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MD2009DFX | STMicroelectronics |
Description: TRANS NPN 700V 10A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V Supplier Device Package: TO-3PF Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 700 V Power - Max: 58 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MD2009DFX | STMicroelectronics |
Bipolar Transistors - Pre-Biased HI VLT NPN PWR TRANS STANDARD DEF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MD2009DFX |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 700V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 58 W
Description: TRANS NPN 700V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 58 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MD2009DFX |
|
Hersteller: STMicroelectronics
Bipolar Transistors - Pre-Biased HI VLT NPN PWR TRANS STANDARD DEF
Bipolar Transistors - Pre-Biased HI VLT NPN PWR TRANS STANDARD DEF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH