MD2103DFX
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auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MD2103DFX
Description: TRANS NPN 700V 6A TO3PF, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Current - Collector (Ic) (Max): 6 A, Part Status: Obsolete, Supplier Device Package: TO-3PF, DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 3A, 5V, Current - Collector Cutoff (Max): 200µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 750mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Power - Max: 52 W, Voltage - Collector Emitter Breakdown (Max): 700 V.
Weitere Produktangebote MD2103DFX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Geschäftskunde |
|---|---|---|---|---|---|
 |
MD2103DFX | STMicroelectronics |
Description: TRANS NPN 700V 6A TO3PF Package / Case: TO-3P-3 Full Pack Packaging: Tube Current - Collector (Ic) (Max): 6 A Part Status: Obsolete Supplier Device Package: TO-3PF DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 3A, 5V Current - Collector Cutoff (Max): 200µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 750mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Power - Max: 52 W Voltage - Collector Emitter Breakdown (Max): 700 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MD2103DFX |
Hersteller: STMicroelectronics
Description: TRANS NPN 700V 6A TO3PF
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 3A, 5V
Current - Collector Cutoff (Max): 200µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 750mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 52 W
Voltage - Collector Emitter Breakdown (Max): 700 V
Description: TRANS NPN 700V 6A TO3PF
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 3A, 5V
Current - Collector Cutoff (Max): 200µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 750mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 52 W
Voltage - Collector Emitter Breakdown (Max): 700 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH